Richardson RFPD, Inc. announced the availability and full design support capabilities for a family of silicon carbide semiconductor devices from Wolfspeed, a Cree Company.
According to Wolfspeed, the E-Series line of SiC MOSFETs represents the industry’s first automotive-qualified, PPAP-capable and humidity-resistant MOSFETs. The devices include Wolfspeed’s third-generation rugged planar technology, featuring the lowest switching losses and highest figure of merit.
The E-Series MOSFETs are optimized for use in EV battery chargers and high voltage DC/DC converters for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications.
The devices feature a minimum of 900 V drain-source breakdown voltage (Vbr) across entire the operating temperature range, high-speed switching with low output capacitance, 900 V blocking voltage with low RDS(on), and fast intrinsic diodes with low reverse recovery (Qrr). The E-Series is easy to parallel, simple to drive, and available in TO-247-3 packages.
Additional key features of the new E-Series include:
Part Number |
Current Rating* |
Rds(On) (mΩ)* |
Gate Charge |
Reverse Recovery Charge (Qrr) |
Output Capacitance |
Reverse Recover Time (Trr) |
35 |
65 |
30 |
150 |
60 |
35 |
|
23 |
120 |
17 |
115 |
40 |
24 |
|
11.5 |
280 |
9.5 |
47 |
20 |
20 |
*@ 25 ºC
To find more information, please visit the E3M0065090D, E3M0120090D and E3M0280090D webpages.