Richardson RFPD, Inc. announced the availability and full design support capabilities for a family of silicon carbide semiconductor devices from Wolfspeed, a Cree Company.

According to Wolfspeed, the E-Series line of SiC MOSFETs represents the industry’s first automotive-qualified, PPAP-capable and humidity-resistant MOSFETs. The devices include Wolfspeed’s third-generation rugged planar technology, featuring the lowest switching losses and highest figure of merit.

The E-Series MOSFETs are optimized for use in EV battery chargers and high voltage DC/DC converters for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications.

The devices feature a minimum of 900 V drain-source breakdown voltage (Vbr) across entire the operating temperature range, high-speed switching with low output capacitance, 900 V blocking voltage with low RDS(on), and fast intrinsic diodes with low reverse recovery (Qrr). The E-Series is easy to parallel, simple to drive, and available in TO-247-3 packages.

Additional key features of the new E-Series include:

Part Number

Current Rating*
(A)

Rds(On) (mΩ)*

Gate Charge
(nC)

Reverse Recovery Charge (Qrr)
(nC)

Output Capacitance
(pF)

Reverse Recover Time (Trr)
(ns)

E3M0065090D

35

65

30

150

60

35

E3M0120090D

23

120

17

115

40

24

E3M0280090D

11.5

280

9.5

47

20

20

*@ 25 ºC


To find more information, please visit the E3M0065090DE3M0120090D and E3M0280090D webpages.