Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with a new single-channel 16 Gb LPDDR4X device that combines low power ratings with increased clock speeds and data rates in the 200-ball FBGA package. 

With low-voltage operation of 0.6 V, the AS4C1G16MD4V-046BIN delivers higher power efficiency for increased battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, wearables, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. 

Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAM delivers a high clock frequency of 2.133 GHz for an extremely high data rate of 4.2 Gbps. The device operates over an industrial temperature range of -40°C to +95°C. 

The AS4C1G16MD4V-046BIN's single channel consists of eight banks of 16 bits. The component provides fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and configurable drive strength. An on-chip temperature sensor controls the self-refresh rate. 

Alliance Memory's LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification. 

Samples and production quantities of the AS4C1G16MD4V-046BIN are available now, with lead times of eight weeks with six-month forecast. Pricing for U.S. delivery ranges between $15 and $18.