Infineon Technologies LLC Memory Solutions has announced the availability of its latest radiation-hardened asynchronous static RAMs designed with Infineon’s patented RADSTOP™ technology.

The extended CoolSiC portfolio offers 2 kV silicon carbide (SiC) MOSFETs, along with a 2kV SiC diode for applications up to 1500 V _DC. 

The TO247PLUS package offers a greater creepage distance for easy design-in. EDT2 technology is optimized for traction inverter and has a breakdown voltage of 750 V, supporting battery voltages up to 470 V _DC, and significantly lower switching, and conduction losses.

The EiceDRIVER F3 Enhanced is housed in a 300 mil wide-body DSO 16 package with a large creepage distance of 8 mm. The single-channel isolated gate driver offers an exceptional high common-mode transient immunity (CMTI) of up to 300 kV/us and typical output currents of up to 8.5 A.

To offer practical solutions for design challenges in end applications, Infineon Technologies AG launches the latest generation of OptiMOS™ Source-Down (SD) power MOSFETs. They come in a PQFN 3.3 x 3.3 mm ² package and a wide voltage class ranging from 25 V up to 100 V. 

EiceDRIVER™ 1EDN71x6G HS 200V single-channel gate driver ICs family. The product family is designed to enhance the performance of CoolGaN™ Schottky Gate (SG) HEMTs but is also compatible with other GaN HEMTs and Silicon MOSFETs.

Infineon Technologies AG, is expanding its product offering for battery management systems with a sensing and balancing IC, the TLE9012AQU. The device is especially designed for batteries in hybrid and electric cars, but it is also suitable for other applications.

As first chipmaker, the company set up a dedicated production process for flip-chip packages that is fully aligned with the high-quality requirements of the automotive market. Infineon now launches the first respective product: the linear voltage regulator OPTIREG^TM TLS715B0NAV50.