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Richardson Electronics, Ltd. and Navitas Semiconductor have announced an expanded distribution partnership for next-gen silicon carbide power semiconductors for Europe, the Middle East, and Africa.
Infineon has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 μm and a diameter of 300 mm, in a high-scale semiconductor fab.
The power electronics supply chain has undergone a phase of rapid expansion in manufacturing capacity, particularly for SiC and silicon devices, as well as SiC wafers.
IDTechEx's report, "Power Electronics for Electric Vehicles 2025-2035: Technologies, Markets, and Forecasts", assesses the potential upsides and challenges to using engineered substrates for EV power electronics, including scalability, production volumes, and performance.
Infineon has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter SiC power semiconductor fab. Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production.
Infineon Technologies AG introduces the 750V G1 discrete CoolSiC MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
To help developers implement SiC solutions and fast-track the development process, Microchip Technology introduces the 3.3 kV XIFM plug-and-play mSiC gate driver with patented augmented switching technology, which is designed to work out-of-the-box with preconfigured module settings to significantly reduce design and evaluation time.
Infineon Technologies AG detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), February 25-29.