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Infineon Extends Radiation-Hardened Memory Portfolio with Industry’s First Space Qualified Parallel Interface 1 and 2 Mb F-RAMs

June 19, 2024

Infineon's new radiation-hardened 1 and 2 Mb parallel interface ferroelectric-RAM nonvolatile memory devices feature unsurpassed reliability and endurance, with up to 120 years of data retention at 85-degree Celsius, along with random access and full memory write at bus speeds.

Extened Line of Radiation-Hardened Asynchronous Static RAMs With Embedded ECC

Infineon Extends Line of Radiation-Hardened Asynchronous Static RAMs With Embedded ECC for Space and Other Extreme Environment Applications

November 14, 2023

Infineon Technologies AG

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Infineon Technologies LLC Memory Solutions has announced the availability of its latest radiation-hardened asynchronous static RAMs designed with Infineon’s patented RADSTOP™ technology.