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In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20% better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions.
Infineon announces two new generations of high voltage and medium voltage CoolGaN TM devices, which now enable customers to use GaN in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization.
Teledyne e2v HiRelannounces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors.