Items Tagged with 'GaN'

Infineon launches a new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, further strengthening its GaN portfolio.

Infineon has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 μm and a diameter of 300 mm, in a high-scale semiconductor fab.

The power electronics supply chain has undergone a phase of rapid expansion in manufacturing capacity, particularly for SiC and silicon devices, as well as SiC wafers.

Infineon Technologies AG has announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride wafer technology.

 IDTechEx's report, "Power Electronics for Electric Vehicles 2025-2035: Technologies, Markets, and Forecasts", assesses the potential upsides and challenges to using engineered substrates for EV power electronics, including scalability, production volumes, and performance.

With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap semiconductor products.

Infineon Technologies AG detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), February 25-29.

Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density. Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs.

Driven by the high margins of automotive, more M&As are expected in the rapidly evolving power GaN ecosystem.

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors.