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Marvell , a leader in storage, networking, and connectivity semiconductor solutions, announced the Alaska® M 88E2180 Gigabit Ethernet transceiver, the world’s first octal multi-Gigabit Ethernet transceiver compatible with both the IEEE 802.3bz standard and the NBASE-T AllianceSM specification for 2.5 and 5 Gbps operation over CAT5e cables.

Analog Devices, Inc., which recently acquired Linear Technology Corp., announces the LT4294 IEEE 802.3bt Powered Device (PD) interface controller for applications requiring up to 71W of delivered power. This new Power over Ethernet (PoE) standard – IEEE 802.3bt – increases the power budget to enable new applications and features, while supporting 10 Gigabit Ethernet (10GBASE-T) and maintaining backward compatibility with older IEEE 802.3af and 802.3at PoE equipment.

Keysight is offering a free seminar to help high-speed digital design engineers, SI and PI engineers, and design team managers, learn the skills they need to overcome signal integrity (SI) and power integrity (PI) challenges.

Schaffner introduces three new series of single-phase filters. The three new high performance filters are an extension to the standard variants of the FN 2010, FN 2030 and FN 2090 series.

TE Connectivity (TE) has introduced the Corcom IEC inlet RFI filter IH series to suppress electromagnetic interference (EMI) conducted in equipment used in medical environments requiring C18 ungrounded inlets.

Microsemi Corporation, a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, and Analog Devices, Inc., the leading global high-performance analog technology company, announced a scalable Silicon Carbide (SiC) driver reference design solution based on a range of Microsemi SiC MOSFET products and Analog Device's ADuM4135 5KV isolated gate driver. The dual SiC MOSFET driver reference design provides user-friendly design guides enabling faster time to market for customers using Microsemi SiC MOSFETs and supports the transition to Microsemi's next generation SiC MOSFETs.

Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing additional module platforms and topologies for the 1200 V CoolSiC™ MOSFET family. Infineon is now able to bring the potential of SiC technology to a new level.