Infineon

Infineon Technologies AG today announced two new CoolGaN product technologies, CoolGaN bidirectional switch and CoolGaN Smart Sense.

Infineon Technologies AG introduces the SSO10T TSC package with OptiMOS MOSFET technology.

Motor drive applications are taking a leap forward with the launch of the Infineon OptiMOS 6 200 V MOSFET product family.

The design is built around a Teledyne e2v QLS1046-Space edge computing module that is configured by the radiation-hardened 64MByte Infineon SONOS based NOR Flash memory, enabling high performance space processing applications.

The automotive-graded SiC MOSFET generation offers high power density and efficiency, enables bi-directional charging, and significantly reduces system cost in on-board charging and DC-DC applications.

Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing additional module platforms and topologies for the 1200 V CoolSiC™ MOSFET family. Infineon is now able to bring the potential of SiC technology to a new level.