Articles by Teledyne e2v

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors.

The design is built around a Teledyne e2v QLS1046-Space edge computing module that is configured by the radiation-hardened 64MByte Infineon SONOS based NOR Flash memory, enabling high performance space processing applications.

Supplied in a multi-chip package (MCP) format, each Teledyne e2v DDR4T04G72 memory features expansive bus capabilities, where 64bits are assigned to data transfer and an additional 8bits for error correction. The DDR4T04G72 is an optimal companion for the company’s own Qormino® processors, and is also compatible with most processors, SoCs, and FPGAs from other vendors.

The TD99102 UltraCMOS^® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The flip chip part is ideal for driving Teledyne HiRel’s 100 V high reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules and space motor drives.

Teledyne e2v HiRel announced availability of a pair of the latest isolated gate drivers ideally suited for driving GaN power parts used in a wide variety of power supply, dc/dc converter, battery management systems (BMS), Point-of-Load (POL) modules and motor control applications.

Supporting 11GSamples/s operation, it can achieve super-high frequency direct sampling - reaching all the way into the Ka-Band frequency (26 GHz and above). The EV12PS640 will offer a very wide dynamic range.

Wide output bandwidth 12-bit (or 8-bit) data converter can deal with sample rates of up to 12 GSamples/s. It has the capacity to generate signal waveforms over multiple frequency bands. 

Teledyne e2v has announced the DDR4T04G72M. The first radiation-tolerant DDR4 memory chip, featuring a total 4GB capacity.