Items Tagged with 'DDR5'

In the final installment of his article series "DDR5 Electrical and Timing Measurement Techniques," Randy White explores how following a standard workflow for setting up thresholds and timings to distinguish bursts in DDR5 memory interfaces can make design validation much more efficient, ultimately ensuring compliance with specifications and improving system margin by identifying and resolving any issues, especially those related to either read or write transactions.

In this article, Randy White discusses variations in clock timing and how this can impact the reliability of a memory system. White highlights the importance of considering probe calibration, random jitter removal, and controlling bandwidth for accurate measurements, providing examples that demonstrate why care must be taken during probe attachment, calibration, and using a jitter/noise analysis application to evaluate jitter levels, therefore ensuring memory reliability.

Optimizing DDR5 memory system validation involves a strategic focus on probe and interposer solutions for in-system measurements. The selection of probe architecture, whether RC or RCRC, plays a key role in managing probe loading. To make the right choice, evaluating source impedance and signal characteristics, especially for bursted signaling, is essential. As DDR5 continues to evolve at higher speeds and reach its top speed phase, integrating non-ideal loading modeling within simulations and effectively de-embedding probe and interposer effects become critical components of a comprehensive testing plan.s

Offering a 50% increase in performance, Micron extends leading-edge 1β technology to power server and PC applications.

In earlier DDR systems, the clock, command, and address signals (here in referred to as C/A) were distributed to multiple DRAMs using a forked topology, in which these signals propagate to all the DRAMs in the system at approximately the same time. The propagation delays on the command and address lines (in such systems) introduced timing skew into the system, limiting the operating frequency of the bus and eventually impacting the performance of these memory systems.

Due to the ever increasing speed-grade of memory systems, it is necessary to apply equalizations, which creates severe burdens for memory system design engineers. Fortunately, the challenges have been overcome by an IBIS-AMI solution for single-ended signals and the introduction of a forwarded clocking solution. Read on to learn more.

The most notable difference between DDR5 and previous generations is the introduction of decision feedback equalization, a technique used in serial link systems to improve the integrity of received signals.  In the wake of the new technology, this short article outlines some of the fundamental signal integrity concepts in the context of DDR5.

Eagerly anticipated, the next generation of DRAM technologies (DDR5/LPDDR5) are presently being validated in the lab by leading silicon vendors worldwide. This latest generation has a big surprise in store for hardware engineers and SI specialists that need to simulate such systems. DDR5 will introduce decision feedback equalization (DFE) for the DRAM receiver for the very first time.